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23rd International Conference on Amorphous and Nanocrystalline Semiconductors August 23 - 28, 2009 |
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The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23) continued the tradition of biennial conferences that have served since 1965 (Prague) as the premier forum for scientific and technological exchange among researchers investigating amorphous semiconductors and related materials. Topics ranged from the physics and chemistry of fundamental phenomena to the engineering of materials and devices.An emphasis since 1997 on microcrystalline and nanocrystalline semiconductors complemented the traditional focus on amorphous thin films such as hydrogenated Si (a-Si:H) and bulk glasses such as the chalcogenides In addition, the conference featured key sessions on amorphous and nanocrystalline electronic oxides, oxide and organic semiconductors and phase change memory materials. Sessions for specialists on film growth mechanisms, on medium-range order, defects, and metastability, and on electronic transport and optical properties provided opportunities for cross-fertilization among researchers studying diverse material systems. |
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Photographs of the conference now online!
Check the website for ICANS24: www.icans24.org |
