23rd International Conference on Amorphous and Nanocrystalline Semiconductors

August 23 - 28, 2009

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The 23rd International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 23) continues the tradition of biennial conferences that have served since 1965 (Prague) as the premier forum for scientific and technological exchange among researchers investigating amorphous semiconductors and related materials.

Topics range from the physics and chemistry of fundamental phenomena to the engineering of materials and devices.An emphasis since 1997 on microcrystalline and nanocrystalline semiconductors complements the traditional focus on amorphous thin films such as hydrogenated Si (a-Si:H) and bulk glasses such as the chalcogenides

In addition, the conference will feature key sessions on amorphous and nanocrystalline electronic oxides, oxide and organic semiconductors and phase change memory materials. Sessions for specialists on film growth mechanisms, on medium-range order, defects, and metastability, and on electronic transport and optical properties will provide opportunities for cross-fertilization among researchers studying diverse material systems.

Registration for the Conference, Banquet, Excursion, and Reception is still possible online! On site registrations will be possible (only for the Conference itself) and at an increased registration rate.

Program available on website »

Registration open »

Tutorials fully booked

Unfortunately, no more places are available in the Sunday Tutorials. The maximum number of participants in the tutorial session has been reached on June 26, 2009.

Registration for the ICANS23 Conference is still open. icans23.org.

Program now available on the program page.