23rd International Conference on Amorphous and Nanocrystalline Semiconductors

August 23 - 28, 2009

Invited Speakers
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The ICANS23 featured prominent INVITED SPEAKERS in key topics of the Conference.
 
Speakers were (in alphabetic order):

Karsten Bittkau
IEF-5, Forschungszentrum Jülich
Near-field study of light scattering at rough interfaces of a-Si:H/µc-Si:H tandem solar cells

Paul Blom
TNO Holst Center, Eindhoven, the Netherlands
Electron and hole transport in organic semiconductors
 
Howard Branz
NREL, Colorado, USA
Hydrogen diffusion and the hydrogen collision model of Staebler-Wronski Effect metastability in amorphous silicon
 
David Drabold
Ohio University, Athens, OH, USA
Atomistic origin of Urbach tails and electronic transport in amorphous silicon
 
Antonin Fejfar
Institute of Physics, Academy of Science, Prague, Czech Republic
Relation of nanoscale and macroscopic properties of mixed phase Si thin films

Alexander Kolobov
AIST, Tsukuba, Japan

Amorphous chalcogenide semiconductors: the journey from academic curiosity to advanced applications

Warren Jackson
HP Labs, USA
Bias Stress Stability of Metal Oxide Devices
 
Klaus Lips
Helmholtz-Zentrum Berlin, Germany
The Staebler-Wronski Effect revisited with novel ESR spectroscopic tools
 
Maria Mitkova
Boise State University, Boise, ID, USA
Structural details of silver-doped chalcogenide glasses and their application for nanoionic nonvolatile memory
 
Sara Olibet
Institute of Microtechnology, University of Neuchātel, Switzerland
Properties of interfaces in amorphous/crystalline silicon heterojunctions
 
Martin Salinga
RWTH Aachen, Germany
Systematics of Phase-Change Materials
 
Baojie Yan
United Solar Ovonic, USA
High efficiency amorphous and nanocrystalline silicon solar cells