23rd International Conference on Amorphous and Nanocrystalline Semiconductors

August 23 - 28, 2009

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The ICANS23 featured prominent KEYNOTE SPEAKERS in key topics of the Conference.

 

Speakers were:

 

Stephen Elliott

University of Cambridge, England, UK

Computer-simulation design of new phase-change memory materials”.

 

Hideo Hosono

Tokyo Institute of Technology, Japan

Amorphous and nanoporous oxide semiconductors: recent advance

 

Michio Kondo, Takuya Matsui, Chang Chia-Wen, Hitoshi Sai

AIST, Tsukuba, Japan

Novel μc-Si_1-xGe_x bottom cell material and device structure for higher efficiency and throughput.

 

Karen Gleason

MIT, Cambridge, MA, USA

Enabling Hybrid Devices through the Vapor Deposition of Functional and Conducting Polymers.

 

Edward Hamers

Nuon Helianthos, Arnhem, the Netherlands

Roll-to-roll manufacturing of large area flexible silicon solar cells.